2N3296 (SILICON)
NPN silicon annular transistor for linear amplifier applications from 2 to 100 MHz.
(10-102) Collecto...
2N3296 (SILICON)
NPN silicon annular
transistor for linear amplifier applications from 2 to 100 MHz.
(10-102) Collector connected to case;
stud isolated from case
MAXIMUM RATINGS (Note 1)
Rating
Collector-Base Voltage
Symbol
VCB
Value
60
Unit
Vdc
Collector-Emitter Voltage
VCES
60
Vdc
Emitter-Base Voltage
VEB 3.0 Vdc
Collector Current (Continuous)
IC
700 mAdc
Base Current (Continuous)
IB
100 mAdc
RF Input Power (Note 2) RF Output Power (Note 2)
P. 10
Pout
1.0 Watt (PEP) 5.0 Watts (PEP)
Total Device Dissipation (25°C Case Temperature) Derating Factor above 25°C
Po
6.0 Watts 40 mW/oC
Total Device Dissipation at (25°C Ambient Temperature) .
.Derating Factor above 25°C
PD
0.7 Watts
4.67
mW/oC
Junction Temperature
TJ 175 °c
Storage Temperature Range
Tstg
-65 to +175
°c
Note 1: The maximum ratings as given for dc conditions can be exceeded on a pulse basis. See Electrical Characteristics.
Note 2: PEP = Peak Envelope Power.
2-476
2N3296 (Continued)
...
