2SC1015

2SC1015 PNP Transistors Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Low niose: NF=1dB(Typ.) at f=1KHz 3 2 1.Base 2.Emitter 1 3.Collector ■ Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -50 -50 -5 -150 200 150 -55 to 150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Testconditions Ic= -100 A, IE=0 Ic= -0.1mA, IB=0 IE= -100 A, IC=0 VCB=-50V , IE=0 VCE= -50V , IB=0 ...