2N2381 (GERMANIUM) 2N2382
PNP germanium epitaxial mesa transistors for highspeed, high-current switching applications.
...
2N2381 (GERMANIUM) 2N2382
PNP germanium epitaxial mesa
transistors for highspeed, high-current switching applications.
CASE 31
(TO-5)
Collactor connectad to casa
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation @ TA ; 25°C
Derate above 25°C Total Device Dissipation @ TC ; 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol 2N2381 2N2382
VCEO VCB VEB
IC PD
PD
TJ , Tstg
15 20 30 45 4.0 4.0
500 300 4.0 750 10 -65 to +100
Unit
Vdc Vdc Vdc mAdc mW mW/oC mW mW/oC °c
FIGURE 1 - ACTIVE REGION TIME CONSTANT
FIGURE 2 - TOTAL CONTROL CHARGE
4
JTJ 25°C
~
" -.........
"""
- ....-~".,..
30 50 70 100 Ie. COLLECTOR CURRENT (mAde)
300 500
g.,'"., 3000
::>
~
o
~ 1000
TJ = 25°C
~I=IO I,
/
/' ./
'~" 700 :i
"'"~ 500
e1
~ 300
~<.)
g / '~
....
J
100 1.0
3.0 5.0 7.0 10.0
30.0
I,. BASE CURRENT (mAde)
50.0
2-292
2N2381, 2N2382 (Continued)
ELECTRICAL CHARACTER...
