2N2405
For Specifications, See 2N1893 Data.
2N2410 (SILICON)
CASE 31
(TO·5)
NPN.silicon annular transistor designed ...
2N2405
For Specifications, See 2N1893 Data.
2N2410 (SILICON)
CASE 31
(TO·5)
NPN.silicon annular
transistor designed for highspeed, medium-power saturated switchingapplications.
Collector connected to case
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
Collector-Emitter Voltaga
RBE = 10 ohms
VCEO VCER
Collector-Base Voltage
VeB
Emitter-Base voitage
Collector Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ Te = 25°C
Derate above 25°C
VEB IC PD
PD
Operating Junction Temperature Range
TJ
Storage Temperature Range
Tstg
Value
30 40
60 5.0 800 800 4.57 2.5 14.3 200
-65 to +200
Unit
Vdc Vdc
Vdc Vdc mAdc mW mW/oC Watts mW/oe
°c °c
2-296
2N2410 (continued)
ELECTRICAL CHARACTERISTICS (T. = 25'e ,,'''' ,th,,..'" ,p,,,',,d)
Characteristic I Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1)
(IC = 30 mAde. IB = 0)
BV CEO (sus)
Collector-Emitter Breakdown Voltage III (Ic = 30 mAde. RBE = 10 ohms)
BV...
