2N2476

2N2476 (SILICON) 2N2477 NPN silicon annular transistors designed for highspeed, low-power saturated switching applications. CASE 31 (TO-5) Collector connected td case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCB Emitter-Base Voltage VEB Total Device Dissipation @ TA = 25° C Derate above 25° C PD Total Device Dissipation @ T C = 25° C Derate above 25° C PD Operating & Storage Junction Temperature Range Tj' Tstg Value 20 60 5.0 0.6 3.4 2.0 11. 4 -65 to +200 Unit Vdc Vdc Vdc Watt mW/oC Watts mW/oC °c FIGURE 1- TURN-ON TIME TEST CIRCUIT Vin Z=500 10000 500 400 V of< out o -..I2ns : (max) PW >150 ns D.C. < 210 I 6.4Vl:I£j-----l- lI V 90/0-: out I-ton~ *Input and output waveforms monitored by means of an oscilloscope or other indicating device having a rise time

---

Similar Datasheet

• 2N2405 NPN silicon annular transistors - Motorola
• 2N2405 Silicon NPN Transistor - NTE
• 2N2405 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR - Semelab
• 2N2405 SILICON NPN TRANSISTOR - Central Semiconductor
• 2N2410 NPN.silicon annular transistor - Motorola
• 2N2410 Small Signal Transistors - Central Semiconductor
• 2N2411 PNP SILICON TRANSISTOR - Central Corp
• 2N2411 (2N2xxx) Small Signal Transistors - ETC
• 2N2412 PNP SILICON TRANSISTOR - Central Corp
• 2N2412 (2N2xxx) Small Signal Transistors - ETC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)