2N2723 thru 2N2725 (SILICON)
CASE 20(8)
(TO-72)
Two NPN silicon annular transistors connected as a darlington amplifie...
2N2723 thru 2N2725 (SILICON)
CASE 20(8)
(TO-72)
Two
NPN silicon annular
transistors connected as a darlington amplifier, and designed for applications requiring very high gain.
EZ c
=MAXIMUM RATINGS (TA 25°C unless otherwise noted)
Rating
Symbol
2N2723 2N2724
2N2725
Collector Emitter Voltage
VCE20
60 45
Collector-Base Voltage
VCB1
80 45
Emitter-Base Voltage
VE2B1
12 10
Collector Current
IC 40 30
Total Device Dissipation@TA = 25°C Derate above 25°C
Total Device Dissipation @T C = ·25° C
Derate above 25°C
TC = 100°C
Operating and Storage Junction Temperature Range
PD PD
TJ , Tstg
0.5 2.9 1.8 1.0 10.5 -65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
Watt mW/oC Watts Watt mW/oC °c
2-336
2N2723 thru 2N2725 (continued)
=ELECTRICAL CHARACTERISTICS ITA 2S·C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage 111 (IC = 10 mAde, IBI = 0)
Collector-Base Breakdown Voltage (IC = 10 IlAde, IE2 = 0)
Emitter-Base Breakdown V...
