2N2845 thru 2N2848 (SILlC()N)
CASE 22
(TO-18)
2N2845 2N2847
NPN silicon annular transistors designed for highspeed, me...
2N2845 thru 2N2848 (SILlC()N)
CASE 22
(TO-18)
2N2845 2N2847
NPN silicon annular
transistors designed for highspeed, medium-power saturated switchingapplications.
CASE 31
(TO-S) 2N2846 2N2848
MAXIMUM RATINGS
Rating
Symbol 2N2845 2N2846 2N2847 2N2848 Unit
Collector-Eniitter Voltage*
VCEO* 30 30
20 20
Vdc
Collector-Base Voltage
VCB
60 60
60 60
Vdc
Eniitter-Base Voltage
VEB
5.0 5.0
5.0 5.0
Vdc
Total Device Dissipation@ TA = 25°C Derate above 25°C
Po
360 800 2.1 4.6
360 800
mW
2.1 4.6 mW/oC
Total Device Dissipation@TC = 25°C Derate above 25°C
Po
1.2 3.0 6.9 17.2
1.2 3.0
Watts
6.9 17.2 mW/oC
Operating Junction Temperature Range
TJ
-65 to 200
°c
Storage Temperature Range *Applicable from 1 mA to 30 mA (Pulsed)
Tstg
-65 to+ 200
°c
2-350
2N2845 thru 2N2848 (continued)
ELECTRICAL CHARACTERISTICS (T... = 2S"C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1) (IC " 30 mAde, 18 " 0) (Ic " 30 mAde, 18 "...
