2N 1561 (GERMANIUM)
2N1562
2N1692
2N1693
PNP germanium mesa transistors for VHF power
amplifier applications.
CASE 23
CASE 24
(TO·l07)
2N1561
2N1562
(TO·l02)
2N1692
2N1693
Collector connected to case;
stud isolated from case
MAXIMUM RATINGS
Rating
Symbol 2N1561 2N1562 2N1692 2N1693 Unit
Collector-Emitter Voltage
VCE 25
Collector-Base Voltage
VCB 25
Emitter-Base Voltage*
Collector Current-Continuous
Peak
Total Device Dissipation @ TA = 250 C
Derate above 250 C
VEB*
IC
PD
3.0
250
500
250
3.33
Total Device Dissipation @ TC = 250 C
Derate above 250 C
Operating and Storage JWlction
Temperature Range
PD
TJ , Tstg
3.0
40
25 25
25 25
2.0 3.0
250
500
250
3.33
250
500
350
4.67
3.0 3.0
40 40
-65 to 100
25 Vdc
25 Vdc
2.0 Vdc
250 mAdc
500
350 mW
4.67 mw;oC
3.0 Watts
40 mW;oC
°c
*May be exceeded provided total rated device dissipation is not exceeded.
14
2
g 10
~8
z
~
~6
~
4
2
0
POWER GAIN versus FREIlUENCY
=I, I 12NI562
Po 450mW j2NI693
r::::~
Po
=
12NI561
550mW J2NI692
-
=VCE ··-15VOC
\ \ T" = 25°C
l \2NI562 --"""\
2NI561
2NI692
2NI693
I~
~
"\
50 70 100
150 200
fREQUENCY (MH,)
300 400
SAFE OPERATING AREA
600r---r---r--'--~~---'
O~~~~~~~~~~
o 10 15 20 25
Veo• COLLECTOR·BASE VOLTAGE (VOLTS)
2-202
