2N1724 (SILICON) 2N1725
CASE 9
(TO-61)
NPN silicon power transistors designed for switching and amplifier applications...
2N1724 (SILICON) 2N1725
CASE 9
(TO-61)
NPN silicon power
transistors designed for switching and amplifier applications.
MAXIMUM RATINGS
Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continuous) Power Dissipation Thermal Resistance I Junction to Case Junction Operating Temperature Range
Symbol
VCB VCE VEB IC PD UJC TJ
Value
120 80 10 5_0 117 1.5 -65 to +200
Unit
Vdc Vdc Vdc Adc Watts °C/W °c
2-213
2N1724, 2N1725 (continued)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max
Emitter-Base Cutoff Current
(VEB =9 Vdc) (VEB =10 Vdc)
Collector-Emitter Cutoff Current
(VCE =60 Vdc, VBE =0) (VCE =60 Vdc, VBE = 0, TC =150°C) (VCE =120 Vdc, VBE =0, TC = 150° C)
Collector-Base Cutoff Current
(VCB =3 Vdc, ~ =0)
2N1725
~BO
ICES ICBO
- - 0.5
- - 10.0
- - 1.0
-- 2.0
- - 10.0 - - 0.1
Collector-Emitter Sustaining Voltage
(IC =200 mAdc, IB =0)
-VCEO(sus)
80
-
DC Current Gain
(VCE =15 Vdc...
