Document
2N1924 thru 2N1926 (GERMANIUM)
CASE 31(1)
(TO-5)
Base connected to case
PNP germanium transistors for general purpose, lowfrequency applications. Characteristics curves similar to 2N524-2N527 series.
MAXIMUM RATINGS
Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Power Dissipation at 25°C Ambient
Symbol
VCB VCEO VEB
IC TJ & Tstg
PD
Value
60 40 25 500 -65 to +100 225
Unit
Vdc Vdc Vdc mAdc
°c
mW
ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise noted)
Characteristics
Collector Cutoff Current VCS = -45 Vdc, IE = 0
Symbol Min
ICBO
-
Emitter Cutoff Current VEB = -25 Vdc, IC = 0
lEBO -
Collector-Base Voltage
IC = 200 /LAdc, IE = 0
VCBO
60
Collector-Emitter Voltage
IC = 50/LAdc, VBE = +l. 5 Vdc, RBE = 10 K
Collector-Emitter Voltage
IC = 0.6 mAdc, RBE = 10 K
VCEX VCER
50 40
Punch-Thru Voltage (VEB = 1 Vdc, VTVM Z 2.1 Megohm)
Vpt
50
Max
10
10
-
-
-
Unit
/L Adc /L Adc Vdc Vdc Vdc Vdc
.