2N1981

19702N (GERMANIUM) 2N 1980 thru 2N 1982 ~ i J~ICASE 5 (T0-36) PNP germanium power transistors for general purpose amplifier and switching applications. MAXIMUM RATINGS Rating Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Symbol vCB VCEO VEB 2N1970 100 50 40 2N1980 50 30 20 2N1981 70 40 20 Collector Current Power Dissipation at TC = 250 C Junction Temperature Range IC PD TJ IS 170 -65 to +110 ELECTRICAL CHARACTERISTICS (TA = 2SOC unless otherwise noted) Characteristic Collector- Base Cutoff Current (VCB = -100 Vdc) (VCB =-50 Vdc) (VCB ,-70Vdc) (VCB = -90 Vdc) (VCB = -2 Vdc) Emitter-Base Cutoff Current (VEB = -40 Vdc) (VEB = - 20 Vdc) (VEB = - 2 Vdc) 2N1970 2NI980 2NI981 2NI982 2N1980-2N1982 2NI970 2N1980-2N1982 2N1980-2N1982 Symbol ICBO lEBO Min - - - - - Collector-Emitter Breakdown Voltage (IC = lAde, IB = 0) Baae- Emitter Voltage (VCE = -2 Vdc, IC = 5 Adc) 2NI970 2NI980 2NI981 2NI982 2NI970 BV CEO VBE 50 30 40 50 - Emitter Floating Poten...