19702N (GERMANIUM)
2N 1980 thru 2N 1982
~
i J~ICASE 5
(T0-36)
PNP germanium power transistors for general purpose amp...
19702N (GERMANIUM)
2N 1980 thru 2N 1982
~
i J~ICASE 5
(T0-36)
PNP germanium power
transistors for general purpose amplifier and switching applications.
MAXIMUM RATINGS
Rating
Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage
Symbol
vCB
VCEO VEB
2N1970
100
50 40
2N1980
50
30 20
2N1981
70
40 20
Collector Current Power Dissipation at TC = 250 C Junction Temperature Range
IC PD TJ
IS 170 -65 to +110
ELECTRICAL CHARACTERISTICS (TA = 2SOC unless otherwise noted)
Characteristic
Collector- Base Cutoff Current
(VCB = -100 Vdc)
(VCB =-50 Vdc) (VCB ,-70Vdc) (VCB = -90 Vdc) (VCB = -2 Vdc)
Emitter-Base Cutoff Current (VEB = -40 Vdc) (VEB = - 20 Vdc) (VEB = - 2 Vdc)
2N1970 2NI980 2NI981 2NI982 2N1980-2N1982
2NI970 2N1980-2N1982 2N1980-2N1982
Symbol
ICBO
lEBO
Min
-
-
-
-
-
Collector-Emitter Breakdown Voltage
(IC = lAde, IB = 0)
Baae- Emitter Voltage (VCE = -2 Vdc, IC = 5 Adc)
2NI970 2NI980 2NI981 2NI982
2NI970
BV CEO VBE
50 30 40 50
-
Emitter Floating Poten...