Document
2N2075 thru 2N2082 (GERMANIUM)
2N2075A thru 2N2082A
CASE 5
(TO-36)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
PNP germanium power transistors for high-power applications in high-reliability equipment.
Symbol
VCEO
2N2078 2N2082
25
2N2077 2N2081
45
2N207& 2N2080
55
2N2075 2N2079
65
Unit
Vdc
Collector-Emitter Voltage
VCES
40
50
70
80 Vdc
Collector-Base Voltage
VCB
40 50 70
80 Vdc
Emitter-Base Voltage
VEB
20 25 35
40 Vdc
Collector Current
IC 15 Adc
Total Device Dissipation @ TC = 25°C
PD
170 Watts
Operating Junction Temperature Range
TJ
-65 to +110
°c
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol eJC
Max Unit
0.5 °C/W
175
~
~ 150 z
0
~ 125 icii ~ 100
.~..
75~
ID
~
.c~.. 50
co
iii! ~c 25
,t
~!II..
""~"'"
" ""~
POWER-TEMPERATURE DERATING CURVE
The maximum average power is related to maxi-
mum junction temperature by the thermal resistance
factor.
This curve has a value of 170 Walls at case tem-
perature.