2N2192,A,B thru 2N2195,A,B
(s.ILlCON)
NPN silicon annular transistors for high-current switching and amplifier applicat...
2N2192,A,B thru 2N2195,A,B
(s.ILlCON)
NPN silicon annular
transistors for high-current switching and amplifier applications.
CASE 31
(TO-S) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation
@ 25°C Ambient Temperature Derating Factor Above 25° C
2N2192
Symbol
2N2192A 2N2192B
2N2194 2N2194A
2N2193
2N2193A 2N2193B
2N2195 2N2195A
2N2195B
2N2194B
Unit
VCB 60 80 45 VCEO 40 50 25
Vdc Vdc
VEB 5.0 B.O 5.0
Vdc
IC 1.0 1.0 1.0
Adc
PD 0.8 0.8 0.6
Watt
4.56 4.56 3.43 mW/oC
Total Device Dissipation @ 25°C Case Temperature
Derating Factor Above 25°C
Junction Temperature, Operating
Storage Temperature Range
PD
2.8 16
Watts
mW/oC
TJ Tstg
-65 to +200 -65 to +200
°c °c
FIGURE 1
= =2N2193, A, B} Vin 15 V, Vb 15 V
= =2N2192, A, B - Vin 7.5 V, Vb 7.5 V
2N2194,A,B
-IV~----------~~--------~ 1 pF
=tr 20 ns =t, 20 ns
Rgon = 50 n
330 pF
J7V
Scope...
