2N2224 (SILICON)
NPN silicon annular transistor designed primarily for high speed switching applications.
CASE 31
(TO·...
2N2224 (SILICON)
NPN silicon annular
transistor designed primarily for high speed switching applications.
CASE 31
(TO·S) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation @ TA = 25° C
Derate above 25°C
Total Device Dissipation @ T C = 25° C
Derate above 25° C Operating Junction Temperature Storage Temperature Range
Symbol
VCEO VCB VEB
IC PD
PD
TJ T stg
Value Unit
40 Vdc
65 Vdc
5.0 Vdc
0.5 Adc
0.8 W
5.33
mW;oC
3.0 Watts
20 mW;oC
+175 -65 to +200
°c .,c
FIGURE 1
+12 Ydc 0-......-""""4710 11--...,..-...,..--1
10k
OY,--_
L -s.oy
-S.OVdc
2-262
~1o%---[-
I s.o Ydc It
I
I
I I
~W%---F
I
I
-I 1-1"
2N2224 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25"C unle" otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 10 /lAdc, ~ = 0)
Emitter-Base...
