2N2303 (SILICON) For Specifications, See 2N722 Data.
2N2322 thru 2N2326 {SILICON}
All-diffused PNPN thyristors designed...
2N2303 (SILICON) For Specifications, See 2N722 Data.
2N2322 thru 2N2326 {SILICON}
All-diffused P
NPN thyristors designed for gating
operation in rnAI p.A signal or detection circuits.
CASE 31(2)
(TO-5)
MAXIMUM RATINGS*(TJ = 12S'C unless otherwise noted, Rs. = 1000 ohms)
Rating
Symbol
Value
Peak Reverse Blocking Voltage (Note 1)
2N2322 2N2323 2N2324 2N2325 2N2326
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5.0 ms)
2N2322
2N2323
2N2324
2N2325
2N2326
Forward Current RMS (All Conduction Angles)
Peak Surge Current (One-Half Cycle, 60 Hz) No Repetition Until Thermal Equilibrium is Restored
Peak Gate Power - Forward
Average Gate Power - Forward
Peak Gate Current - Forward
Peak Gate Voltage - Forward
Reverse
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature (> 1/16" from case, 10 sec. max)
VRSM(rep)
VRSM(non-rep)
IT(RMS) ITSM
25 50 100 150 200
40 75 150 225 300
1.6
15
PGM
PG(AV)
IGM VGFM VGRM
TJ T stg
-
0.1 0.01 0.1 6.0 6.0...
