HY4004W Datasheet (data sheet) PDF





HY4004W Datasheet, N-Channel Enhancement Mode MOSFET

HY4004W   HY4004W  

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HY4004W/A Absolute Maximum Ratings Sym bol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diod e Continuous Forward Current Mounted on Large Heat Sink TC=25°C 40 ±20 175 -55 to 175 208 IDM Pulsed Drain Curre nt * ID Continuous Drain Current PD Max imum Power Dissipation RθJC Thermal Re sistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanc he Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 750** 208 138 268 125 0.56 40 EAS Avalanche Energy, Sing le Pulsed L=0.5mH Note * Repetiti

HY4004W Datasheet, N-Channel Enhancement Mode MOSFET

HY4004W   HY4004W  
ve rating ; pulse width limiited by junc tion temperature ** Drain current is li mited by junction temperature *** VD=32 V 1.4*** Electrical Characteristics (T C = 25°C Unless Otherwise Note d) Unit V °C °C A A A W °C/W J Sym bol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Br eakdown Voltage IDSS Zero G








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