2N722

2N722 (SILICON) (2N1132 JAN AVAILABLE) 2Nl132 2Nl132A 2N2303 PNPSILICON SWITCHING TRANSISTORS PNP SILICON ANNULAR TRANSISTORS ... designed for medium-current switching and amplifier applications. MAXIMUM RATINGS Rating Symbol 2N722 2N1132 2N1132A 2N2303 Unit Collector-Emitter Voltage VCEO 35 35 40 35 Vdc Collector-Emitter Voltage (RBE 10 Ohms) VCER 50 50 50 Vdc 50 Collector-Base Voltage Emitter-Base Voltage Collector Current T~~~a~:~~v~;:j~atlon @TA = 25°C VCB VEB IC PD Total Device Dissipation@Tc=2SoC Derate above 25° C Operating Junction Temperature Range Storage Temperature Range PD TJ .Tstg 50 5.0 - 400 2.67 1.5 10 50 60 5.0 5.0 - 600 600 600 4.0 4.0 2.0 13.3 2.0 13.3 -65 to +175 -65 to +300 50 Vdc 5.0 Vdc 500 mAde 600 mW 4.0 mW/"C 2.0 Watts 13.3 mWiC 'c ·c J CASE 22 (TO-IS) 2N722 2N1132 2N1132A 2N2303 0.200 TO·' OUTLINE (Collector internally connected to case) 1 hr1 :,[0o0.1m95 01. ~--tW11 0.210 n nO.016 DIA u-1.0.019 U .500 MIN 0.100 ...