2N731 (SILICON)
NPN silicon transistor designed primarily for medium'Power audio-frequency applications in industrial s...
2N731 (SILICON)
NPN silicon
transistor designed primarily for medium'Power audio-frequency applications in industrial service,
MAXIMUM RATINGS
Rating
CASE 22
(TO·18)
Collector electrically connected to case
Collector-Emitter Voltage (RBE "'~ 10 ohms)
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Device Dissipation @TA '" 25° C Derate above 25°C
Total Device Dissipation @TC = 25° C Derate above 25° C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCER
VCB VEB IC PD
PD
TJ Tstg
Value
40
60 5.0 1.0 0.5 3.33 1.5 10 +175 -65 to +200
ELECTRICAL CHARACTERISTICS =(1. 2S'C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector·Emitter Breakdown Voltage 111
(IC =100 mAde, ~E =10 ohms)
Collector-Base Breakdown Voltage
(IC =100 /LAde, ~ =0)
Emltter·Base Breakdown Voltage
(~ =100 /LAde, IC =0)
Collector Cutoff Current
(VCB =30 Vdc, ~ = 0) (VCB =30 Vdc, ~ =0, TA =150·C)
BVCER BVCBO BVEBO ICBO
ON CHARACTERI...
