2N735 (SILICON) 2N736 2N739 2N740
NPN silicon annular transistors designed for smallsignal amplifier and general purpose...
2N735 (SILICON) 2N736 2N739 2N740
NPN silicon annular
transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22
(TO·18) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-E':mitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
2N735 2N73g 2N736 2N740
V CEO VCB VEB IC PD
TJ' Tstg
60 80 80 125
5.0 1.0 500 2.86 -65 to +200
Lead Temperature, 1/16" ± 1/32" froIn case for 10 s.
Unit
Vdc Vdc Vdc Adc mW mWrC
°c
2-90
2N735, 2N736, 2N739, 2N740 (Continued)
ELECTRICAL CHARACTERISTICS (TA = 25"C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage' III
(IC = 10 mAde, IB = 0)
Collector-Base Breakdown Voltage (IC = 10 !lAde, IE = 0)
Emitter-Base Breakdown Voltage
(IE = 10 !lAde, IC = 0)
Collector Cutoff Current
(VCB = 40 Vde, IE =0)
Emitter Cutoff Current
(VB...
