2N744 (SILICON)
CASE 22
(TO-18)
Collector connected to case
NPN silicon annular transistor for high-speed switching ap...
2N744 (SILICON)
CASE 22
(TO-18)
Collector connected to case
NPN silicon annular
transistor for high-speed switching applications.
MAXIMUM RATINGS Rating
Collector-Base Voltage
Collector-Emitter Voltage.
Emitter-Base Voltage
Collector DC Current
Total Device Dissipation at 25°C Case Temperature (Derate 6.67 mW/"C above 25·C)
Total Device Dissipation at 25°C Ambient Temperature Derate above 25°C
Junction Temperature
Storage Temperature
Symbol
VCB VCEO VEB IC
PD
PD
TJ Tl:Itg
"Refers to the 'voltage at which the'magnitude of hFE a:pproaches one when the emitter-base diode is open-circuited.
Value
20 12* 5.0 200
1.0
Unit
Vdc Vdc Vdc mAdc
Watt
0.3 2.0
+200
-65 to -+200
Watt mW/oC
·C
·C
SWITCHING TIME TEST CIRCUIT
CHARGE STORAGE TEST CIRCUIT
MODEL 303 LUMATRON PULSE GENERATOR OR EQUIVALENT
1K
400 10 Vde
(Adjust for
R3
IC = 10 mAde)
(HFR)
=IICBI==++1100mmAdAede
IB2 _to mAde
MODEL 12·AB LUMATRON' OSCILLOSCOPE OR EQUIVALENT
2N744 (continued)
ELECTRICAL CHARACTERISTIC...
