2N829

2N828 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic DYNAMIC.CHAI!ACTERISTICS Symbol Current-Gain ....,. Bandwldth Product (IC = 10 mAde, VCE = 1 Vile, f = 100 MHz) Output CapaCitance (VCB = 10 Vde, ~ = 0) Small Signal Current Gain (IC = 10 mAde, VCE = 1 Vde, f = 100 MHz) Delay Plus Rise Time (Figure 1) Storage Time (Figure 1) Fall Time (Figure 1) Charge Storage Time Constant (Figure 2) Rise Time (FiguI'e.3) Storage Time (Figure 4) Fall Time (Figure 4) fT Cob hfe td + tr ts tf TS tr ts tf Min 300 - 3 - - - - - - Typ 400 3.5 4.0 50 33 35 14 7.0 5.0 3.0 I IMax Unit - MHz - pF -- 70 ns 50 ns 50 ns 25 ns - ns - ns - ns 2N828A (GERMANIUM) 2N829 C~l~\ Collector connected to case MAXIMUM RATINGS PNP germanium epitaxial mesa transistors for highspeed switching applications Rating Collector to Base Voltage Symbol Vce Value 15 Unit Vdc Collector to Emitter Voltage VCES 15 Vdc Emitter to Base Voltage VEB 2.5 Vdc Collector Current (ContinUous) IC 200 mAdc ...