2N840 (SILICON) 2N841
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching ...
2N840 (SILICON) 2N841
NPN silicon annular
transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22
(TO·18) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation @ TA =25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
VCEO VCES VCB VEB
IC
PD
TJ , Tstg
Value
45 45 45 2.0
1.0
500 2.86 -65 to +200
Unit
Vdc Vdc Vdc Vdc Adc mW mW;oC °c
2-109
2N840, 2N841 (Continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = 100 !lAdc, IE = 0)
Emitter-Base Breakdown Voltage (IE = 100 !lAdc, IC = 0)
Collector Cutoff Current (VCE = 45 Vdc, VBE = 0, RBE = 5.0 k ohms)
Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0, TA = 150...
