2N910 (SILICON) 2N911
NPN silicon annular transistors designed for smallsignal amplifier and general purpose switching ...
2N910 (SILICON) 2N911
NPN silicon annular
transistors designed for smallsignal amplifier and general purpose switching applications.
CASE 22
(TO-18)
Collector connected to cIse
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
VCEO
Collector-Emitter Voltage Collector-Base Voltage
VCER VCB
Emitter-Base Voltage
Total Device DisSipation @ TA ;;: 25°C Derate above 2!5°C
Total Device Dissipation @ TC ::;: 25°C TC ;: 10QoC
Derate above 25°C Operating and Storage Junction
Temperature Range
VEB
PD PD
TJ' Tstg
Value
60
eo
100
7.0
O. !5 2,86 1.8 0.975 10.3 -65 to +200
Unit
Vdc Vdc Vdc Vdc Watt mW/PC Watt
mW;oC °c
2-115
2N910, 2N911 (Continued) =ELECTRICAL CHARACTERISTICS (T. 2S'C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage'
(IC =30 mAde, IB =0)
Collector-Emitter Sustaining Voltage'
(IC = 100 mAde, RBE ~ 10 ohms)
Collector-Base Breakdown Voltage
(IC = 100 pAde, ~ =0)
Emitter-Base Breakdown Voltage
(~ = 100 pAde...
