2N956
For Specifications, See 2N718A Data.
2N960 (GERMANIUM) 2N961 2N962
2N962JAN AVAILABLE 2N964 2N964JAN AVAILA.BLE ...
2N956
For Specifications, See 2N718A Data.
2N960 (GERMANIUM) 2N961 2N962
2N962JAN AVAILABLE 2N964 2N964JAN AVAILA.BLE 2N965 2N966
PNP germanium epitaxial mesa
transistors for highspeed switching applications.
CASE 22
(TO·18) Collector connected to case
MAXIMUM RATINGS
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation @ TA = 25°C Derate above 25°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and storage Junction Temperature Range
NORMALIZED DC CURRENT TRANSFER RATIO Yersus COLLECTOR CURRENT
~ 2.0
ffi 1.5
~ 1.2
- -~ 1.0
5 0.8
III
+85"C
¥ +25°C
~ 0.6 ,.-
u ,.-
TA = -55°C
/"
~ 0.4
~V
~ 0.3
'"'"~ 0.2 '".J·D.IS
./
1
5
VeE = 1 Vdc
10 20
50
Ie. COLLECTOR CURRENT (mAde)
Symbol
VCE VCB VEB PD
PD
TJ.Tstg
2N960 2N961 2N962 2N964 2N96S 2N966
15 12 12
15 12 12
2.5 2.0 1. 25 150 2.0 300 4.0
-65 to + 100
Unit
Vdc
Vdc
Vdc
mW mW/oC
mW mW/oC
°c
CURRENT GAIN·BANDWIDTH PRODUCT (fT) versus...