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2N965 (GERMANIUM)
2N966
For Specifications, See 2N960 Data.
2N967 (GERMANIUM) For Specifications, See 2N963 Data.
2N968 thru 2N975 (GERMANIUM)
CASE 22
(TO·1S)
\
Collector connected to case
PNP germanium mesa transistors for high-speed switching applications.
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
2N968 2N969 2N970 2N971 2N972 2N973 2N974 2N975
VCES 15 12 12 7.0
Unit
Vdc
Collector-Base Voltage
VCB
15 12 12 7.0
Vdc
Emitter-Base Voltage
VEB 2.5 2.0 1. 25 1. 25
Vdc
Total Device Dissipation @ TA =25°C
Derate above 25°C
PD
Total Device Dissipation @ TC =25°C
Derate above 25°C
PD
Operating and storage Junction Temperature Range
TJ,Tstg
150 2.0
300 4.0
-65 to +100
mW mW/oC
mW mw;oC
°c
2-137
2N968 thru 2N975 (continued)
NORMALIZED D.C. CURRENT GAIN versus COLLECTOR CURRENT
10 8
6 r-- VeE = 1 Vdc
2.0
+?~
1.0
0.8
--0.6
./ ./
- ~0.4 !.----
+25°C_
l.----" _ 550 C
./
0.2 ) ......--V
O. 1 0.1
0.2
0.5 1.0 ' 2.0
10
Ie. COLLECTOR CURRE.
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