2N978 (SILICON)
PNP SILICON ANNULAR TRANSISTOR
designed for general-purpose amplifier applications_
• Collector-Emitter...
2N978 (SILICON)
PNP SILICON ANNULAR
TRANSISTOR
designed for general-purpose amplifier applications_
Collector-Emitter Sustaining Voltage -
VCEO(sus) =20 Vdc (Min) @ IC = 100 mAdc
PNPSILICON AMPLIFIER
TRANSISTOR
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltate
Collector Current
Total Device Dissipation@TA = 25°C Derate above 25°C
Total Device Dissipation @TC ~ 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Svmbol VCEO VCB VEB
IC PD
PD
TJ,Tstg
Value
20 30 5_0
600 0.33 2.64 1.25 10 -65 to + 200
Unit
Vde Vde Vde
mAde
Watt mW/oC
Watts mW/oC
°c
-Indicates JEDEC Registered Data.
l~::: l~r IDIAl OIA
-TI w,o
j~OIA
0.500
Pin 1. Emitter
2. Base 1 3. Collector
2-140
Collector Connected to Case CASE 22 (I) (TO-IS)
2N978 (continued)
*ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage( 1)
(lC =100 mAde, IB =0)
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