2N996

2N996 (SILICON) PNPSILICON ANNULAR TRANSISTOR · .. designed for general-purpose amplifier applications. Collector-Emitter Sustaining Voltage - VCEO(sus) = 12 Vdc (Min) @ IC = 10 mAdc Collector-Base Breakdown Voltage - BVCBO = 15 Vdc (Min) @IC = 10 J.LAdc Emitter-Base Breakdown Voltage BVEBO = 4.0 Vdc (Min)@IE = 10J.LAdc PNPSILICON TRANSISTOR /! *MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@TA "" 2SoC Derate above 25°C Total Device Dissipation @TC=: 25°C Derate above 2SoC Operating and Storage Junction Temperature Range Indicates JEDEC Registered Data. Svmbol VCEO VCB VEB IC Po Po TJ.Tstg Value 12 15 4.0 200 360 2.06 1.2 6.86 -65 to +200 Unit Vdc Vdc Vdc mAde mW mW/oC Watts mW/oC °c STYLE 1 Pin 1. Emitter 2. Base 3. Collector 0.028 0.04ll Collector Connected to Case CASE 22111 ITO-181 2-144 2N996 (continued) *ELECTRICAL CHARACTERISTICS (TA; 25°C unless otherwise no...