ANNULAR TRANSISTOR. 2N996 Datasheet

2N996 TRANSISTOR. Datasheet pdf. Equivalent

Part 2N996
Description PNPSILICON ANNULAR TRANSISTOR
Feature 2N996 (SILICON) PNPSILICON ANNULAR TRANSISTOR · .. designed for general-purpose amplifier applicati.
Manufacture Motorola
Datasheet
Download 2N996 Datasheet

2N996 (SILICON) PNPSILICON ANNULAR TRANSISTOR · .. designed 2N996 Datasheet
Recommendation Recommendation Datasheet 2N996 Datasheet




2N996
2N996 (SILICON)
PNPSILICON ANNULAR TRANSISTOR
· .. designed for general-purpose amplifier applications.
• Collector-Emitter Sustaining Voltage -
VCEO(sus) = 12 Vdc (Min) @ IC = 10 mAdc
• Collector-Base Breakdown Voltage -
BVCBO = 15 Vdc (Min) @IC = 10 J.LAdc
• Emitter-Base Breakdown Voltage -
BVEBO = 4.0 Vdc (Min)@IE = 10J.LAdc
PNPSILICON
TRANSISTOR
/!
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation@TA "" 2SoC
Derate above 25°C
Total Device Dissipation @TC=: 25°C
Derate above 2SoC
Operating and Storage Junction
Temperature Range
• Indicates JEDEC Registered Data.
Svmbol
VCEO
VCB
VEB
IC
Po
Po
TJ.Tstg
Value
12
15
4.0
200
360
2.06
1.2
6.86
-65 to +200
Unit
Vdc
Vdc
Vdc
mAde
mW
mW/oC
Watts
mW/oC
°c
STYLE 1
Pin 1. Emitter
2. Base
3. Collector
0.028
0.04ll
Collector Connected to Case
CASE 22111
ITO-181
2-144



2N996
2N996 (continued)
*ELECTRICAL CHARACTERISTICS (TA; 25°C unless otherwise noted)
Characteristic
Svmbol
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage I 1)
IIc = 10 mAde, IB = 0)
Coliector~Base Breakdown Voltage
IIc = 10 "Ade, IE = 0)
Emitter-Base Breakdown Voltage
liE = 10 "Ade, IC = 0)
Collector Cutoff Current
IVCB = 10 Vde, IE = 0)
IVCB = 10 Vde, IE =0, TA = 150°C)
Emitter Cutoff Current
IVBE = 4.0 Vde, I C = 0)
VCEOlsus)
BVCBO
BVEBO
ICBO
lEBO
ON CHARACTERISTICS
DC Current Gain
IIC = 20 mAde, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage
IIc = 60 mAde, IB = 2.0 mAde)
Base-Emitter Saturation Voltage
(lc = 20 mAde, IB = 2.0 mAdeI
hFE
VCElsatl
VBElsat)
OYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Produet(21
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHzl
Output Capacitance
(VCB =10 Vde, IE = 0, f =100 kHz to 1.0 MHzl
fT
Cob
·1 ndicates JE DEC Registered Data.
(1)Putse Test: Pulse Width ~300 Ils, Duty Cycle s;'2.0%.
(2)fT is defined as the frequency at which Ihfel extrapolates to unity.
Min
12
15
4.0
-
-
-
35
-
-
100
-
Max
-
-
-
0.005
15
10
-
0.3
0.95
-
10
Unit
Vdc
Vde
Vde
"Ade
"Ade
"Ade
-
Vde
Vde
MHz
pF
2-145





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)