2N1131

2N1131 (SILl.CON) 2N1131JAN AVAILABLE 2Nl131A 2N1991 PNP SILICON ANNULAR TRANSISTORS · .. designed for medium-speed switching and amplifier applications where low DC current gain is essential. Low DC Current Gain - hFE =45 (Max) @ IC = 150 mAdc - 2N1131,A Turn-On Time - ton = 45 ns (Max) - 2N 1131A Turn-Off Time - toff = 35 ns (Max) - 2N1131A *MAXIMUM RATINGS Rating Symbol Cpllector·Emitter Voltage Collector·Emitter Voltage Collector·Ba Voltage Emitter·Base Voltage Collector Current - Continuous Total Device Dissipation@TA==2SoC Derate above 250 e Total Device Dissipation@Te= 250 e @TC=I000C Derate above 25°C VeEO VeER VeB VEB Ie Po Po Operating Junction Temperature Range Storage Temperature Range TJ T.tg 2N1131 2N1131A 2N1991 35 40 20 50 50 - 50 60 30 5.0 5.0 5.0 600 600 600 0.6 0.6 4.0 4.0 0.6 4.8 2.0 2.0 1.0 1.0 13.3 13.3 2.0 1.0 16 175 175 150 -65 to +200 -65 to +150 Unit Vde Vde Vde Vde mAde Watt mW/oC Watts Watt mW/oC °c °c T...