2N 1162 thru 11672N (GERMANIUM)
2N1162A thru 2Nl167A
PNP germanium power transistors for switching and amplifier applica...
2N 1162 thru 11672N (GERMANIUM)
2N1162A thru 2Nl167A
PNP germanium power
transistors for switching and amplifier applications in high reliability equipment.
CASE 11A
(TO-3 modified)
2N1162,A 2N1164, A 2N1166, A
CASE 4-04
(TO-41)
2N1163, A 2N1165, A 2N1167, A
MAXIMUM RATINGS
Apply also to standard, non-A series
Rating
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Total Device Dissipation @ 25°C
Derate above 25°C Operating and Storage
Junction Temperature Range
Symbol
2N1162A 2N1163A
2N1164A 2N1165A
2N1166A 2N1167A
VCB
50
80 100
VCES
35
60
75
VEB
25
40
50
P D 106 1. 25
Units
Vdc Vdc Vdc Watts W;OC
TJ , Tstg
-65 to +110
°c
2-169
2N 1162 thru 2N 1167 (continued)
GROUP A ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Collector Cutoff Current
(VCB = VCB(maxl, I,,' = 0)
ICBOI
Collector Cutoff Current
(VCB = 2 V, IE = 0)
(VCB = 15 V, IE = 0, TC = 90°C) (VCB = 30 V, IE = 0, TC = 90°C)
2N1162A-3A' ...