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2N1190 Dataheets PDF



Part Number 2N1190
Manufacturers Motorola
Logo Motorola
Description PNPgermanium transistors
Datasheet 2N1190 Datasheet2N1190 Datasheet (PDF)

2Nl189 2Nl190(GERMANIUM) CASE31{l) ' \ (TO·5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.· MAXIMUM RATINGS Rating Collector-Base Voltage Symbol VCB Value 45 Unit Vdc Collector-Emitter Voltage VCER 30 Vdc Emitter-Base Voltage VEB 15 Vdc Collector Current (Continuous) Junction, Storage Temperature Collector Dissipation, Ambient (Derate 2.67 mW1° C above 25° C) Thermal Resistance (Junction to Ambient) Thermal Resistance (Junctio.

  2N1190   2N1190


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2Nl189 2Nl190(GERMANIUM) CASE31{l) ' \ (TO·5) All leads isolated PNPgermanium transistors for high-gain audio amplifier and switching applications.· MAXIMUM RATINGS Rating Collector-Base Voltage Symbol VCB Value 45 Unit Vdc Collector-Emitter Voltage VCER 30 Vdc Emitter-Base Voltage VEB 15 Vdc Collector Current (Continuous) Junction, Storage Temperature Collector Dissipation, Ambient (Derate 2.67 mW1° C above 25° C) Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) ·Limited by pawerdissipation. IC TJ , Tstg PD 9JA ~C 500*· -65 to +100 200 0.375 0.250 mAde °c mW °C/mW °C/mW ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted Characteristic Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0) (VCB= 10 Vdc, IE = 0, TA = + 7loC) Symbol Min TfP Mal Unit -ICBO -- /lAdc -3.0 10 50 55 100 Emitter-Base Cutoff Current (VEB = 15 Vdc, IC = 0) -lEBO /lAdc 3.0 10 Collector-Emitter Leakage Current (VCE = 30.


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