Document
NTTFS5C454NL
MOSFET – Power, Single, N-Channel
40 V, 3.8 mW, 85 A
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
85
A
60
55
W
27
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 & 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
20
A
14
3.2
W
1.6
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
520
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
61
A
EAS
202 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
2.7 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
47
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS 40 V
RDS(ON) MAX 3.8 mW @ 10 V 6 mW @ 4.5 V
ID MAX 85 A
D (5)
G (4)
S (1,2,3) N−CHANNEL MOSFET
1
WDFN8 (m8FL) CASE 511AB
MARKING DIAGRAM
1
S
D
S
454L
D
S AYWWG D
G
G
D
454L A Y WW G
= Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
June, 2019 − Rev. 4
Publication Order Number: NTTFS5C454NL/D
NTTFS5C454NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
V(BR)DSS V(BR)DSS/
TJ
VGS = 0 V, ID = 250 mA
40 22
V mV/°C
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4)
IDSS IGSS
VGS = 0 V, VDS = 40 V
TJ = 25 °C TJ = 125°C
VDS = 0 V, VGS = 20 V
10 mA
250
100
nA
Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance
Forward Transconductance Gate Resistance CHARGES AND CAPACITANCES
VGS(TH) VGS(TH)/TJ
RDS(on)
gFS RG
VGS = VDS, ID = 50 mA
VGS = 10 V
ID = 20 A
VGS = 4.5 V
ID = 20 A
VDS = 15 V, ID = 40 A
1.2
1.7
2.0
V
−5.1
mV/°C
3.2
3.8
mW
4.8
6
80
S
1.4
W
Input Capacitance
CISS
1600
Output Capacitance
COSS
VGS = 0 V, f = 1 MHz, VDS = 25 V
590
pF
Reverse Transfer Capacitance
CRSS
21
Output Charge
QOSS
VGS = 0 V, VDD = 20 V
21
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 40 A
18
Total Gate Charge
QG(TOT)
8.2
Threshold Gate Charge
QG(TH)
2
nC
Gate−to−Source Charge
QGS
VGS = 4.5 V, VDS = 20 V; ID = 40 A
3.8
Gate−to−Drain Charge
QGD
2.1
Plateau Voltage
VGP
3.2
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 20 V, ID = 40 A, RG = 2.5 W
9.3
100 ns
17
4
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 40 A
TJ = 125°C
0.86 1.2 V
0.75
Reverse Recovery Time
tRR
29
Charge Time Discharge Time
ta
VGS = 0 V, dIS/dt = 100 A/ms,
tb
IS = 40 A
14
ns
15
Reverse Recovery Charge
QRR
20
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures.
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ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
NTTFS5C454NL
TYPICAL CHARACTERISTICS
80
80
10 V to 3.6 V 70
VDS = 10 V 70
3.2 V
60
60
ID, DRAIN CURRENT (A)
50
50
40
40
30
2.8 V
30
TJ = 25°C
20
20
10
10
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
TJ = 1.