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NTTFS5C454NL Dataheets PDF



Part Number NTTFS5C454NL
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTTFS5C454NL DatasheetNTTFS5C454NL Datasheet (PDF)

NTTFS5C454NL MOSFET – Power, Single, N-Channel 40 V, 3.8 mW, 85 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) P.

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NTTFS5C454NL MOSFET – Power, Single, N-Channel 40 V, 3.8 mW, 85 A Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Power Dissipation RqJC (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD TC = 100°C 85 A 60 55 W 27 Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) TA = 25°C ID Steady TA = 100°C State TA = 25°C PD TA = 100°C 20 A 14 3.2 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 520 A Operating Junction and Storage Temperature TJ, Tstg − 55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 61 A EAS 202 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 2.7 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 47 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. www.onsemi.com V(BR)DSS 40 V RDS(ON) MAX 3.8 mW @ 10 V 6 mW @ 4.5 V ID MAX 85 A D (5) G (4) S (1,2,3) N−CHANNEL MOSFET 1 WDFN8 (m8FL) CASE 511AB MARKING DIAGRAM 1 S D S 454L D S AYWWG D G G D 454L A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 June, 2019 − Rev. 4 Publication Order Number: NTTFS5C454NL/D NTTFS5C454NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS V(BR)DSS/ TJ VGS = 0 V, ID = 250 mA 40 22 V mV/°C Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) IDSS IGSS VGS = 0 V, VDS = 40 V TJ = 25 °C TJ = 125°C VDS = 0 V, VGS = 20 V 10 mA 250 100 nA Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance Gate Resistance CHARGES AND CAPACITANCES VGS(TH) VGS(TH)/TJ RDS(on) gFS RG VGS = VDS, ID = 50 mA VGS = 10 V ID = 20 A VGS = 4.5 V ID = 20 A VDS = 15 V, ID = 40 A 1.2 1.7 2.0 V −5.1 mV/°C 3.2 3.8 mW 4.8 6 80 S 1.4 W Input Capacitance CISS 1600 Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = 25 V 590 pF Reverse Transfer Capacitance CRSS 21 Output Charge QOSS VGS = 0 V, VDD = 20 V 21 nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 40 A 18 Total Gate Charge QG(TOT) 8.2 Threshold Gate Charge QG(TH) 2 nC Gate−to−Source Charge QGS VGS = 4.5 V, VDS = 20 V; ID = 40 A 3.8 Gate−to−Drain Charge QGD 2.1 Plateau Voltage VGP 3.2 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(ON) Rise Time tr Turn−Off Delay Time td(OFF) Fall Time tf DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 4.5 V, VDS = 20 V, ID = 40 A, RG = 2.5 W 9.3 100 ns 17 4 Forward Diode Voltage VSD VGS = 0 V, TJ = 25°C IS = 40 A TJ = 125°C 0.86 1.2 V 0.75 Reverse Recovery Time tRR 29 Charge Time Discharge Time ta VGS = 0 V, dIS/dt = 100 A/ms, tb IS = 40 A 14 ns 15 Reverse Recovery Charge QRR 20 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) NTTFS5C454NL TYPICAL CHARACTERISTICS 80 80 10 V to 3.6 V 70 VDS = 10 V 70 3.2 V 60 60 ID, DRAIN CURRENT (A) 50 50 40 40 30 2.8 V 30 TJ = 25°C 20 20 10 10 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 TJ = 1.


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