Power MOSFET
NTTFS5C673NL
Power MOSFET
60 V, 9.3 mW, 50 A, Single N−Channel
Features
• Small Footprint (3.3x3.3 mm) for Compact Desi...
Description
NTTFS5C673NL
Power MOSFET
60 V, 9.3 mW, 50 A, Single N−Channel
Features
Small Footprint (3.3x3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1, 3)
Power Dissipation RqJC (Note 1)
TC = 25°C
ID
Steady TC = 100°C
State TC = 25°C
PD
TC = 100°C
50
A
35
46
W
23
Continuous Drain Current RqJA (Notes 1, 2, 3)
Power Dissipation RqJA (Notes 1 & 2)
TA = 25°C
ID
Steady TA = 100°C
State TA = 25°C
PD
TA = 100°C
13
A
9
3.1
W
1.6
Pulsed Drain Current TA = 25°C, tp = 10 ms
IDM
290
A
Operating Junction and Storage Temperature
TJ, Tstg − 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 2.3 A)
Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IS
52
A
EAS
88
mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
3.2 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
48
1. Th...
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