NDPL100N10B

NDPL100N10B Power MOSFET 100V, 7.2mΩ, 100A, N-Channel www.onsemi.com Features Low On-Resistance Low Gate Charge High Speed Switching 100% Avalanche Tested Pb-Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C VDSS 100V RDS(on) Max 7.2 mΩ@15V 8.7 mΩ@10V ID Max 100A Electrical Connection N-Channel 2 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Junction Temperature Storage Temperature Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds Symbol VDSS VGSS ID IDP PD Tj Tstg IS EAS TL Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *2 Note : *1 VDD=48V, L=100μH, IAV=40A (Fig.1) *2 Insertion mounted Symbol RθJC RθJA Value 100 ±20 100 400 2.1 110 175 −55 to +175 100 147 260 Unit V V A A W °C °C A mJ...