Power MOSFET
NDPL100N10B
Power MOSFET 100V, 7.2mΩ, 100A, N-Channel
www.onsemi.com
Features
• Low On-Resistance • Low Gate Charge • ...
Description
NDPL100N10B
Power MOSFET 100V, 7.2mΩ, 100A, N-Channel
www.onsemi.com
Features
Low On-Resistance Low Gate Charge High Speed Switching 100% Avalanche Tested Pb-Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
VDSS 100V
RDS(on) Max 7.2 mΩ@15V 8.7 mΩ@10V
ID Max 100A
Electrical Connection
N-Channel
2
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC) Drain Current (Pulse) PW≤10μs, duty cycle≤1% Power Dissipation Tc=25°C Junction Temperature
Storage Temperature
Source Current (Body Diode) Avalanche Energy (Single Pulse) *1 Lead Temperature for Soldering Purposes, 3mm from Case for 10 Seconds
Symbol VDSS VGSS ID
IDP
PD Tj Tstg IS EAS
TL
Thermal Resistance Ratings
Parameter
Junction to Case Steady State Junction to Ambient *2 Note : *1 VDD=48V, L=100μH, IAV=40A (Fig.1)
*2 Insertion mounted
Symbol RθJC RθJA
Value 100 ±20 100
400
2.1 110 175 −55 to +175 100 147
260
Unit V V A
A
W °C °C A mJ...
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