150N10

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK100N10 IXFN150N10 V DSS I D25 100 V 100 A 100 V 150 A trr £ 200 ns R DS(on) 12 mW 12 mW TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 I DM I AR EAR dv/dt PD T J T JM Tstg TL VISOL Md Weight Symbol V DSS VGH(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 120°C, limited by external leads T C = 25°C, pulse width limited by T JM T C = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS t = 1 min I ISOL £ 1 mA t=1s Mounting torque Terminal connection torque Maximum Ratings IXFK IXFN 100 100 ±20 ±30 100  76 560 75 30 5 100 100 ±20 ±30 150 560 75 30 5 V V V V A A A A mJ V/ns 500 520 W -55 ... +150 150 -55 ... +150 °C °C °C 300 - °C - 2500 - 3000 V~ V~ 0.9/6 - ...