Power MOSFETs
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFK100N10 IXFN150N10
V DSS
...
Description
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFK100N10 IXFN150N10
V DSS
I
D25
100 V 100 A
100 V 150 A
trr £ 200 ns
R DS(on)
12 mW 12 mW
TO-264 AA (IXFK)
Symbol
VDSS VDGR VGS VGSM ID25 ID120 I
DM
I
AR
EAR dv/dt
PD T
J
T JM
Tstg TL VISOL
Md
Weight
Symbol
V DSS
VGH(th) IGSS IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 120°C, limited by external leads
T C
=
25°C,
pulse
width
limited
by
T JM
T C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque Terminal connection torque
Maximum Ratings
IXFK
IXFN
100 100
±20 ±30 100
76 560
75
30
5
100 100
±20 ±30 150
560
75
30
5
V V
V V
A A A A
mJ
V/ns
500 520 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 - °C
- 2500 - 3000
V~ V~
0.9/6 -
...
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