100N10

100N10 100N10 N-Channel PowerTrench® MOSFET 100V, 75A, 10mΩ Features RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handing capability RoHS compliant Applications DC to DC converters / Synchronous Rectification Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D G DS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS VGSS ID IDM EAS dv/dt PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 75oC) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC TJ, TSTG TL Operating and Storage Temperature Range Maximum...