EPITAXIAL TRANSISTORS. BC212 Datasheet


BC212 TRANSISTORS. Datasheet pdf. Equivalent


Part Number

BC212

Description

PNP SILICON PLANAR EPITAXIAL TRANSISTORS

Manufacture

CDIL

Total Page 4 Pages
Datasheet
Download BC212 Datasheet


BC212
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
BC212, BC212A, BC212B
BC213, BC213A, BC213B,
BC213C
BC214, BC214B, BC214C
TO-92
Plastic Package
Silicon Small Signal General Purpose Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
BC212 BC213
BC214 UNITS
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
Junction to case
VCEO
VCBO
VEBO
IC
PD
PD
Tj, Tstg
Rth(j-a)
Rth(j-c)
50 30 30
60 45 45
5
100
350
2.8
1
8
-55 to +150
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
357 ºC/W
125 ºC/W
Continental Device India Limited
Data Sheet
Page 1 of 4

BC212
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC212, BC212A, BC212B
BC213, BC213A, BC213B,
BC213C
BC214, BC214B, BC214C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Voltage
VCEO IC=2mA,IB=0
BC212
50
BC213, BC214
30
Collector Base Voltage
VCBO IC=10µA.IE=0
BC212
60
BC213, BC214
45
Emitter Base Voltage
VEBO IE=10µA, IC=0
5
Collector Cut off Current
ICBO VCB=30V,IE=0
Emitter Cut off Current
IEBO VEB=4V, IC=0
DC Current Gain
BC212, BC213 hFE IC=10µA,VCE=5V
40
BC214
100
BC212
IC=2mA,VCE=5V
60
BC213
80
BC214
140
BC212, BC214
IC=100mA,VCE=5V*
BC213
Collector Emitter Saturation Voltage VCE(sat) IC=10mA,IB=0.5mA
IC=100mA,IB=5mA*
Base Emitter Saturation Voltage
VBE(sat) IC=100mA,IB=5mA*
Base Emitter On Voltage
VBE(on) IC=2mA,VCE=5V
0.6
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
DYNAMICS CHARACTERISTICS
Transition Frequency
BC212 fT IC=10mA, VCE=5V
BC213
f=50MHz
BC214
Output Capacitance
Noise Figure
Cob VCB=10V, IE=0
BC212, BC213 NF IC=200µA, VCE=5V
RS=2KW f=1KHz
f=200HZ
BC214 NF IC=200µA, VCE=5V
RS=2KW f=30Hz
to 15KHz
Small Signal Current Gain
BC212
BC213
BC214
| hfe |
IC=2mA, VCE=5V
f=1KHZ
A
B
C
*Pulse Condition: Pulse Width 300us, Duty Cycle 2%.
MIN
60
80
140
100
200
350
Continental Device India Limited
Data Sheet
TYP MAX UNITS
V
V
V
V
V
15 nA
15 nA
600
120
140
0.10
0.25 0.6
1.00 1.4
0.62 0.72
V
V
V
V
TYP MAX UNITS
280 MHz
360 MHz
320 MHz
6 pF
10 dB
2 dB
300
400
600
Page 2 of 4


Features Continental Device India Limited An IS/I SO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTO RS IS/ISO 9002 Lic# QSC/L- 000019.2 BC 212, BC212A, BC212B BC213, BC213A, BC21 3B, BC213C BC214, BC214B, BC214C TO-92 Plastic Package Silicon Small Signal G eneral Purpose Amplifier ABSOLUTE MAXI MUM RATINGS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL BC212 BC213 BC214 UNITS Collector Emitter V oltage Collector Base Voltage Emitter B ase Voltage Collector Current Continuou s Power Dissipation @ Ta=25ºC Derate A bove 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Stora ge Junction Temperature Range THERMAL R ESISTANCE Junction to ambient Junction to case VCEO VCBO VEBO IC PD PD Tj, Ts tg Rth(j-a) Rth(j-c) 50 30 30 60 45 45 5 100 350 2.8 1 8 -55 to +150 V V V m A mW mW/ºC W mW/ºC ºC 357 ºC/W 125 ºC/W Continental Device India Limite d Data Sheet Page 1 of 4 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC212, BC212A, BC212B BC213, BC2.
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