2N350A, 2N351 A, 2N376A (continued)
OUTPUT CURRENT versus EMITTER·DRIVE VOLTAGE
II5.0
4.5
I 1I
/ /'-2N!7'A~
/ J'/
/...
2N350A, 2N351 A, 2N376A (continued)
OUTPUT CURRENT versus EMITTER·DRIVE VOLTAGE
II5.0
4.5
I 1I
/ /'-2N!7'A~
/ J'/
/ / /'-2N!5IA I '// '-2N!50A
Vh'
, fAv
~~1.0
.5
=VCE 2 VOLTS
o
~ o .2
.4
.6
.1
1.0 1.2 1.4 1.11
VIE' BASE TO EM IlTER VOLTAGE (VOLTS)
1.1
INPUT CURRENT verSU$ EMmER·DRIVE VOLTAGE
200
110
I
~ 120
~
i
i3 10
!
40
/
2N!50 A} 2N!!!1 A ~
/
2N!7' A
'-..j
/
I
V /
/ VCE' 2 VOLTS
....... /oo .2 .4 . .1 1.0 1.2 1.4 1.6
VIE' BASE TO EMITTER VOLTAGE (YOLTS)
1.8
2N375 (GERMANIUM)
2N618
2N1359
2N1360
2N1362 thru 2N1365
CASE~
PNP germanium power
transistors for general purpose switching and amplifier applications.
(TO-3)
MAXIMUM RATINGS
Rating
Symbol
2N1359 2N375 2N1362 2N1364 2N1360 2N618 2N1363 2N1365
Unit
Collector-Emitter Voltage
VCES 40 60 75 100 Vdc
Collector-Base Voltage
VCB 50 80 100 120 Vdc
Emitter-Base Voltage
Collector Current-Continuous Peak
VEB 25 40 50 60 Vdc IC 3.0 Adc 10
Total Device Dissipation @ TC = 250 C
Derate above 2...
