JAN2N559-2

·2N554 (GERMANIUM) 2N555 For Specifications, See 2N178 Data. JAN 2N559-1 (GERMANIUM) JAN 2N559-2 JAN 2N559-3* PNP germanium mesa transistors designed for military and industrial high-reliability, high-speed switching applications. CASE 22 (TO-18) Collector connected to case MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Emitter Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range VCES VCB VEB IC IB IE Po Po TJ Tstg 15 15 5.0 50 50 50 150 2.0 300 4.0 -65 to +100 -65 to +150 Vdc Vdc Vdc mAdc mAdc mAdc mW mW/oC mW mW/oC °c °c Level 3 reliability data shown for information only. Qualification tests will be initiated upon established customer requirements. 2-48 JAN 2N559.1, .2, -3 (Continued) RELIABILITY RATINGSt Est. Max QUALITY LEVELS (LTPD) ...