germanium transistor. 2N655 Datasheet

2N655 transistor. Datasheet pdf. Equivalent

Part 2N655
Description PNP germanium transistor
Feature 2N653 thru 2N655 (GERMANIUM) CASE31(1 (10-5) All leads isolated PNP germanium transistor, ·for hig.
Manufacture Motorola
Datasheet
Download 2N655 Datasheet

2N655 Datasheet
2N653 thru 2N655 (GERMANIUM) CASE31(1 (10-5) All leads isol 2N655 Datasheet
InterFET Product Folder Technical Support Order Now 2N65 2N6550 Datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-111 2N6551 Datasheet
2N6551 Datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-111 2N6552 Datasheet
2N6552 Datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-111 2N6553 Datasheet
2N6553 Datasheet
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-111 2N6554 Datasheet
Recommendation Recommendation Datasheet 2N655 Datasheet




2N655
2N653 thru 2N655 (GERMANIUM)
CASE31(1\
(10-5)
All leads isolated
PNP germanium transistor, ·for high-gain amplifier
and switching service in the audio frequency range.
MAXIMUM RATINGS
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
*Collector D. C. Current
Junction Temperature Limits
Storage Temperature Limits
Collector Dissipatton in, Ambient
Derate 2.67 mW/·C above 25·C
Thermal ReSistance, Junction to Ambient
Symbol
VCB
VCER
VEB
IC
TJ
Tstg
PD
6JA
Value
30
25
25
250·
-65 to +100
-65 to +100
200
0.375
Unit
Volts
Volts
Volts
rnA
·C
·C
mW
·C/mW
.Limited by power diSSipation.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Small Signal Current Gain
VCE .. 6 V, IE .. 1. 0 mA, I .. 1 kHz
Small Signal Input Impedance
VCE = 6 V, IE .. 1. 0 mA, I .. 1 kHz
2N653
2N654
2N655
Symbol
Min Typ Max
Min
Typ Max
Min
Typ Max
Unit
-hie 30 49 70 50 80 125 100 130 250
- - -hie 750
2900 1500
4700 3000
8500 ohms
Small Signal Current Gain Cutoff
Frequency
VCB = 6 V, ~ - 1. 0 mA
fab 1.5 2.0 2.5 MHz
Output Capacity
Cob 10 10 10 pF
VCB .. 6 V, ~ • 0 mA, I,. 1 MHz
Noise Figure
=VCE 4. 5 V, IE .. O. 5 mA,
R,. =I, f =kHz
.1f-lHz
Collector Reverse Current
VCB - 25 V, ~ =0
Emitter Reverse Current
VEB -25V,Ie=0
NF 10 10 10 dB
ICBO
~BO
5.0 15
5.0 15
5.0 15
5.0 15
5,0 15 pA
5.0 15 pA
=Collector-Emitter Reverse Current
VCE " 25 V, RaE 10k
leER
600
600
600 p:A
Base-Emitter Input Voltage
VCE - 6 V, IC =1. 0 mA
VBE
0.3
0.3
0.3 Vdc
2-54



2N655
2N653 thru 2N655 (continued)
1000
800
800
..... 400
N
ti 200
'~."..
~
100
80
II.
0
...
60
'"z 40
au:
'"A. 20
SMALL SIGNAL CURRENT GAIN (hf.)
versus TEMPERATURE
r: VeE" 6 VOLTS
IE =I MA
,.,.V V
~io' VeE" I VOLT-
IE" 50 MA-=
ALL TYPES
o
-80 -60 -40 -20 0 20 40 80 80 100
JUNCTIOH TEMPERATURE ac
POWER-TEMPERATURE DERATIHG CURVE
220
-- -- - -"'\ 'y-200
8Jc • O.2'·CI .... IInod
i...... 180
160
:::;
:::! 140
:I
~ 120
~
:100
;;;
~ 80
:..!. 60
o
.... 40
20
"- \
\. r\
'- \
'\ 1\
8 ~ \JA ·0.375"CfI•• C....)
ALL TYPES
"1\
]\\
'\ ~
"o
o
1
w ro~
~~ ~ ~
~ ~~
AMBIENT OR CASE TEMPERATURE 'C
OUTPUT CURRENT versus BASE DRIVE VOLTAGE
250
.. \;l5;..IE....
.2N61 ""-I
c::::I; 200
~
-..:I
150
veE' I VOLT
L/1I f"-..- 2N653
.I~..z.....
JV /IE
IE
'"u 100
IE
.u.0............ 50
u0
~~~/
~ V./
"""'"o
o 0.2 0.4 0.6
0.8
BASE TO EMITTER VOLTAGE (VIII VOLTS
LARGE SIGNAL CURRENT GAIN
versus COLLECTOR CURRENT
BASE TO EMITTER VOLTAGE (Vse) VOLTS
180
160
. 140
...
~ 120
VCO' I VOLT
z .......
= 100
.Z
~ 80
IE
'":>
-u 60
~
.......... r 2N655
k
r--2N654
....
......... ~'-
U
Q
4 O~
- .1"- ....
l"'-I - 1-
-1-_
0
V2N653-
o ..1
o 20 40 60 80 100 120 140 160 180 200
COLLECTOR CURRENT Ci.) MILLIAMPERES
2-55





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)