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2N656

NPN Transistor

Description

2N656 (SILICON) 2N657 NPN SILICON ANNULAR TRANSISTORS . NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications. High Collector·Emitter Breakdown Voltage - BVCEO = 100 Vde (Min) @ IC = 250 !lAde - 2N657 High Emitter-Base Breakdown Voltage - BVEBO = 8.0 Vde (Min) @ IE = 250 !lAde NPN SILICON ANNULAR ...

Motorola

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