annular transistors. 2N697 Datasheet

2N697 transistors. Datasheet pdf. Equivalent


Part 2N697
Description NPN silicon annular transistors
Feature 2N696 (SILICON) 2N697 CASE 31 (TO-5) NPN silicon annular transistors designed for smallsignal ampl.
Manufacture Motorola
Datasheet
Download 2N697 Datasheet

www.DataSheet.co.kr TECHNICAL DATA NPN MEDIUM POWER SILICON 2N697 Datasheet
www.DataSheet.co.kr 2N697 Dimensions in mm (inches). 8.51 2N697 Datasheet
2N697 Datasheet
Continental Device India Limited An ISO/TS 16949, ISO 9001 a 2N697 Datasheet
GENERAL PURPOSE SILICON NPN TRANSISTOR 2N697 • Hermetic TO39 2N697 Datasheet
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Recommendation Recommendation Datasheet 2N697 Datasheet




2N697
2N696 (SILICON)
2N697
CASE 31
(TO-5)
NPN silicon annular transistors designed for small-
signal amplifier and general purpose switching appli-
cations.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCB 60
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ' Tstg
0.6
13.3
2.0
13.3
-65 to +200
watt
mWrC
Watts
mWrC
°c
ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage"
(Ic = 100 mAdc, RBE = 10 ohms)
Symbol Min Max Unit
BVCER"
40
Vdc
Collector-Base Breakdown Voltage
(IC = 100 j.tAdc, IE = 0)
BVCBO
60
Vdc
Emitter-Base Breakdown Voltage
(~ = 100 !.LAdc, IC = 0)
BVEBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, ~ = 0)
(VCB= 30 Vdc, IE = 0, TA = 1500 C)
ICBO
- !.LAdc
1.0
- 100
ON CHARACTERISTICS
DC Current Gain.
(IC = 150 mAdc, VCE = 10 Vdc)
Collector-Emitter Saturation Voltage·
(IC = 150 mAdc, ~ = 15 mAdc)
Base-Emitter Saturation Voltage·
(IC = 150 mAdc, IB = 15 mAdc)
2N696
2N697
hFE•
.
VCE(sat)
VBE(sat)*
20
40
-
-
-
60
120
Vdc
1.5
Vdc
1.3
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)'
Output Capacitance
(VCB = 10 Vdc, ~ =.0)
2N696
2N697
fT MHz
40 -
50 -
-Cob
pF
35
• Pulse Test: Pulse Length ::; 12 ms, Duty Cycle::; 2.0%.
2-61





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