A2N707, (SILICON)
CASE 22
(TO-18) Collector connected to case
MAXIMUM RATINGS
NPN silicon epitaxial mesa transistors f...
A2N707, (SILICON)
CASE 22
(TO-18) Collector connected to case
MAXIMUM RATINGS
NPN silicon epitaxial mesa
transistors for VHF oscillator and class C amplifier applications.
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage (RBE ~ 10 ohms)
Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation @ TA = 25°C Derate above 250 C
Total Device Dissipation @ TC = 25°C Derate above 250 C
Operating and Storage Junction Temperature Range
Symbol
VCEO VCER VCB VEB
PD
PD
TJ,Tstg
2N707
-
2N707A
40
Unit
Vdc
Vdc 28 -
56 70 Vdc
4.0 5.0 Vdc
0.3 0_ 5 Watt 2.0 3_33 mW/oC
1.0 6.67
1.2 8.0
-65 to + 175
Watts mW/oC
°c
50 n Input
180 pF
2N707 (Note 1) 2N707A
0.001 /IF
4-30
RFC 1.8
0.17
J.LH
pF
/lH
2)
.01 J.LF
3:1 Air Core
50 fl Output
-
Ll L2
Ll 5 turns #14 wire wound on 1/2" diameter.
L2 2 turns #14 wire wound on L1 ·
+VCC (Note 4)
Note 1 Note 2 Note 3
Heat sink is required. Adjust for Class C operation. Very High conductance silicon diode.
Note 4 Adjus...
