7182N (SILICON)
2N1420
NPN silicon annular Star transistors for mediumcurrent switching and amplifier applications.
2N...
7182N (SILICON)
2N1420
NPN silicon annular Star
transistors for mediumcurrent switching and amplifier applications.
2N718 2N1420
CASE 22
(TO-IS)
CASE 31
(TO-5)
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage 2N718 2N1420
Symbol VCB VCER
Value 60
40 30
Unit
Vdc Vdc
Emitter-Base Voltage
VEB
5.0 Vdc
Total Device Dissipation at 250 C Case Temperature
Derating Factor Above 250 C
Total Device Dissipation at 25 0 C Ambient Temperatures
Derating Factor Above 250 C
Junction Temperature
Storage Temperature range
PD
PD TJ Tstg
2N1420 TO-5
2N71S TO-IS
3.0 1.5 20 10
0.6 0.4 4.0 2.66
+ 175
-65 to + 200
Watts mW/oC
watts mW/oC °c
°c
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Collector Cutoff Current
(Vce = 30 Vdc, IE = 0) (Vca = 30 Vdc, IE = 0, TA = 150°C)
Collector- Base Breakdown Voltage
(Ic = 100 !LAdc, IE = 0)
Collector- Emitter Breakdown Voltage
(IC = 100 mAdc, pulsed; Re;; 10 Ohms)
...
