90N15

Advance Technical Information High Current MegaMOSTMFET N-Channel Enhancement Mode IXTK 90N15 V DSS ID25 R DS(on) = = = 150 V 90 A 16 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 I D(RMS) IDM I AR E AR EAS dv/dt PD T J TJM Tstg TL M d Weight TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1.0 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 Maximum ratings 150 V 150 V ±20 V ±30 V 90 A 75 A 360 A 90 A 45 mJ 1.5 J 5 V/ns TO-264 AA (IXTK) G D S D (TAB) G = Gate S = Source D = Drain Tab = Drain 390 -55 ... +150 150 -55 ... +150 300 0.7/6 10 W °C °C °C °C Nm/lb.in. g Features Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Internationalstandardpackage Fastswitchingtimes ...