90N15 Datasheet: N-Channel Enhancement Mode FET





90N15 N-Channel Enhancement Mode FET Datasheet

Part Number 90N15
Description N-Channel Enhancement Mode FET
Manufacture IXYS
Total Page 2 Pages
PDF Download Download 90N15 Datasheet PDF

Features: Advance Technical Information High Curr ent MegaMOSTMFET N-Channel Enhancement Mode IXTK 90N15 V DSS ID25 R DS(on) = = = 150 V 90 A 16 mΩ Symbol Test conditions VDSS VDGR VGS VGSM ID25 I D (RMS) IDM I AR E AR EAS dv/dt PD T J TJ M Tstg TL M d Weight TJ = 25°C to 150 °C TJ = 25°C to 150°C; RGS = 1.0 M Continuous Transient TC = 25°C MOSFE T chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 Maximum ra tings 150 V 150 V ±20 V ±30 V 90 A 75 A 360 A 90 A 45 mJ 1.5 J 5 V/ns TO-26 4 AA (IXTK) G D S D (TAB) G = Gate S = Source D = Drain Tab = Drain 390 - 55 ... +150 150 -55 ... +150 300 0.7/6 10 W °C °C °C °C Nm/lb.in. g Feat ures • • Low RDS (on) HDMOSTM pro cess Rugged polysilicon gate cell struc ture • Internationalstandardpackage • Fastswitchingtimes .

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Advance Technical Information
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 90N15
V
DSS
ID25
R
DS(on)
=
=
=
150 V
90 A
16 m
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
I
D(RMS)
IDM
I
AR
E
AR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
M
d
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 M
Continuous
Transient
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
Maximum ratings
150 V
150 V
±20 V
±30 V
90 A
75 A
360 A
90 A
45 mJ
1.5 J
5 V/ns
TO-264 AA (IXTK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
Tab = Drain
390
-55 ... +150
150
-55 ... +150
300
0.7/6
10
W
°C
°C
°C
°C
Nm/lb.in.
g
Features
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Internationalstandardpackage
Fastswitchingtimes
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 250 µA
IGSS VGS = ±20 V DC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
R
DS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 ms, duty cycle d 2%
Characteristic Values
Min. Typ.
Max.
150 V
2.0 4.0 V
±100 nA
50 µA
2 mA
16 m
Applications
Motorcontrols
DC choppers
Switched-mode power supplies
Advantages
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
© 2002 IXYS All rights reserved
98876 (01/02)

     






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