.4M.64FRlO/lN8l6
.4Ml.36FRS .4Ml.36FR2 .4M2.04FRS .4M2.04FR2
MZ2360 MZ236l MZ2362
CONSTANT-VOLTAGE REFERENCE DIODES FOR...
.4M.64FRlO/lN8l6
.4Ml.36FRS .4Ml.36FR2 .4M2.04FRS .4M2.04FR2
MZ2360 MZ236l MZ2362
CONSTANT-VOLTAGE REFERENCE DIODES FOR LOW-VOLTAGE APPLICATIONS
MAXIMUM RATINGS
Rating
DC Power Dissipation @ TL ~ 300C ±30C. Lead Length = 3/8"
Operating and Storage Junction Temperature Range
.. high·conductance silicon diodes designed as a stable forward reference source for biasing
transistor amplifiers and similar applications.
Guaranteed Forward Voltage Range Choice of Package Temperature Effects Provided
Symbol
Po
Value 400
Unit
mW
TJ. Tstg
-6510+175
°c
FORWARD REFERENCE DIODES
- STABISTORS-
.4M1.36FR5 .4M1.36FR2 .4M2.04FR5 .4M2.04FA2 MZ2361 MZ2362
MECHANICAL CHARACTERISTICS
Case: Choice of package, either Glass or Surmetic Dimensions: See outline drawings finish: All external surfaces are corrosion resistant and leads are readily solder-
able and weldable Polarity: Cathode indicated by polarity band. Cathode negative for forward
reference application. Weight: 0.2 Gram (app...
