STI55NF03L
N-channel 30 V, 0.01 Ω, 55 A, I²PAK STripFET™ II Power MOSFET
Features
Type STI55NF03L
VDSS 30 V
RDS(on) ...
STI55NF03L
N-channel 30 V, 0.01 Ω, 55 A, I²PAK STripFET™ II Power MOSFET
Features
Type STI55NF03L
VDSS 30 V
RDS(on) max < 0.013 Ω
ID 55 A
■ Optimized for high switching operation ■ Low gate charge ■ Logic level gate drive
Application
■ Switching applications – Automotive
Description
This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
123
I²PAK
Figure 1. Internal schematic diagram
$ 4!" OR
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Table 1. Device summary Order code STI55NF03L
Marking 55NF03L
3
!-V
Package I²PAK
Packaging Tube
May 2011
Doc ID 018838 Rev 1
1/12
www.st.com
12
Contents
Contents
STI55NF03L
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...