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AT403S12

Power Semiconductors

PHASE CONTROL THYRISTOR

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++...


Power Semiconductors

AT403S12

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POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 PHASE CONTROL THYRISTOR AT403 Repetitive voltage up to Mean on-state current Surge current 1200 V 400 A 5 kA FINAL SPECIFICATION gen 03 - ISSUE : 05 Symbol Characteristic Conditions Tj [°C] 125 125 125 Value Unit BLOCKING V V V I I RRM RSM DRM RRM DRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage Repetitive peak reverse current Repetitive peak off-state current V=VRRM V=VDRM 1200 1300 1200 30 30 V V V mA mA 125 125 CONDUCTING I I I V V r T (AV) T (AV) TSM Mean on-state current Mean on-state current Surge on-state current I² t On-state voltage Threshold voltage On-state slope resistance 180° sin, 50 Hz, Th=55°C, double side cooled 180° sin, 50 Hz, Tc=85°C, double side cooled sine wave, 10 ms without reverse voltage On-state current = 600 A 25 125 125 125 400 320 5 125 x1E3 1.35 1.0 0.850 A A kA A²s V V mohm I² t T T(TO) T SWITCHING di/dt dv/dt td tq Q rr I rr I I H L Critical rate of rise of on-state current, min. Critical rate of rise of off-state voltage, min. Gate controlled delay time, typical Circuit commutated turn-off time, typical Reverse recovery charge Peak reverse recovery current Holding current, typical Latching current, typical From 75% VDRM up to 410 A, gate 10V 5ohm ...




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